NX5020UNBKR
NX5020UNBK/SOT23/TO-236AB
NX5020UNBKR Specifications
Part Status：
Active
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
FET Feature：
-
Grade：
-
Qualification：
-
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)：
50 V
Vgs(th) (Max) @ Id：
950mV @ 250µA
Supplier Device Package：
TO-236AB
Gate Charge (Qg) (Max) @ Vgs：
1 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
330mA (Ta), 680mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 10V
Rds On (Max) @ Id, Vgs：
1.8Ohm @ 330mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：
20.5 pF @ 25 V
Power Dissipation (Max)：
310mW (Ta), 1.7W (Tc)
