PMDXB590UPEZ
MOSFET 2P-CH 20V 0.57A 6DFN
PMDXB590UPEZ Specifications
Part Status：
Active
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
-
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Vgs(th) (Max) @ Id：
1V @ 250µA
Configuration：
2 P-Channel (Dual)
Package / Case：
6-XFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs：
0.8nC @ 4.5V
Supplier Device Package：
DFN1010B-6
Power - Max：
280mW (Ta), 6W (Tc)
Current - Continuous Drain (Id) @ 25°C：
570mA (Ta), 2.3A (Tc)
Rds On (Max) @ Id, Vgs：
770mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
53.5pF @ 10V
